Target debris collection device and extreme ultraviolet light source apparatus including the same

ABSTRACT

A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.

PRIORITY STATEMENT

This U.S. non-provisional application claims the benefit of priorityunder 35 U.S.C. § 119 to Korean Patent Application No. 10-2019-0103855,filed on Aug. 23, 2019 in the Korean Intellectual Property Office(KIPO), the contents of which are herein incorporated by reference intheir entirety.

BACKGROUND

Various example embodiments relate to a target debris collection device,an extreme ultraviolet light source apparatus including the same, anextreme ultraviolet light system, and/or a method for operating theextreme ultraviolet light source apparatus. More particularly, exampleembodiments relate to a target debris collection device capable ofcollecting target material debris formed in an extreme ultraviolet (EUV)vessel and an extreme ultraviolet light source apparatus including thesame, etc.

In the manufacture of a semiconductor device, extreme ultraviolet (EUV)light may be adopted as a light source in EUV lithography. A laserproduced plasma (LPP) source may irradiate a target source having one ormore emission rays in the EUV range, e.g., tin, xenon or lithium, with alaser light to emit EUV light by an interaction with the target sourceand the laser light. When the target source is irradiated by the laserlight, microparticles may be formed and deposited within an EUV vessel,and maintenance for collecting and removing the deposited targetmaterial debris may be performed in a manual manner. The maintenance ofthe EUV vessel may take a considerable amount of time, and thusproductivity may be decreased.

SUMMARY

One or more example embodiments provide a target debris collectiondevice capable of automatically collecting and removing target materialdebris formed within an EUV vessel.

One or more example embodiments provide an extreme ultraviolet lightsource apparatus including the same.

According to at least one example embodiment, a target debris collectiondevice for extreme ultraviolet light source apparatus, includes a bafflebody extending within an extreme ultraviolet (EUV) vessel between acollector and an outlet port of the EUV vessel, the baffle bodyconfigured to allow extreme ultraviolet light reflected from thecollector to pass through an internal transmissive region of the bafflebody, a discharge plate provided in a first end portion of the bafflebody adjacent to the collector, the discharge plate configured tocollect target material debris on an inner surface of the baffle body, aguide structure configured to guide the target material debris collectedin the discharge plate to a collection tank, and a first heating memberprovided in the guide structure, the first heating member configured toheat the target material debris.

According to at least one example embodiment, an extreme ultravioletlight source apparatus includes a collector included in a vessel, thecollector configured to reflect extreme ultraviolet light, a baffleassembly included in the vessel, the baffle assembly configured to allowthe extreme ultraviolet light reflected from the collector to passthrough an internal transmissive region of the baffle assembly, a guidestructure configured to guide target material debris collected in thebaffle assembly to a collection tank, and a first heating memberprovided in the guide structure, the first heating member configured toheat the target material debris.

According to at least one example embodiment, an extreme ultravioletlight source apparatus includes a collector included in a vessel, thecollector configured to reflect extreme ultraviolet light, and a targetdebris collection device configured to collect target material debriswithin the vessel. The target debris collection device includes a bafflebody between the collector and an outlet port of the vessel, the bafflebody configured to allow the extreme ultraviolet light reflected fromthe collector to pass through an internal transmissive region of thebaffle body, a discharge plate provided in a first end portion of thebaffle body adjacent to the collector, the discharge plate configured tocollect the target material debris within the baffle body, a guidestructure configured to guide the target material debris collected inthe discharge plate to a collection tank, the guide structure having alength between 100 mm and 300 mm, and a first heating member provided inthe guide structure, the first heating member configured to heat thetarget material debris.

According to at least one example embodiment, a target debris collectiondevice for an extreme ultraviolet light source apparatus may include aguide unit to guide target material debris collected in a baffleassembly to a collection tank. The guide unit may include at least oneheating member configured to maintain a liquid and/or semi-liquid stateof the target material debris, and/or impede, decrease the occurrenceof, and/or prevent the liquid target material debris from becomingsolidified.

Accordingly, according to one or more of the example embodiments, thetarget material debris deposited within an EUV vessel may not besolidified (e.g., the target material debris may be in a liquid and/orsemi-liquid state), and therefore may be exhausted smoothly to thecollection tank. Thus, maintenance time for removing the tin materialdeposited within the EUV vessel may be reduced greatly.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 11 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a cross-sectional view illustrating an exposure apparatus inaccordance with at least one example embodiment.

FIG. 2 is a block diagram illustrating the extreme ultraviolet lightsource in accordance with at least one example embodiment.

FIG. 3 is a cross-sectional view illustrating a target debris collectiondevice in accordance with at least one example embodiment.

FIG. 4 is a block diagram illustrating a heating device of the targetdebris collection device in FIG. 3 according to at least one exampleembodiment.

FIG. 5 is a perspective view illustrating a portion of a baffle assemblyof the target debris collection device in FIG. 3 according to at leastone example embodiment.

FIG. 6 is a perspective view illustrating a portion of a discharge plateof the baffle assembly in FIG. 5 according to at least one exampleembodiment.

FIG. 7 is a bottom view of the baffle assembly in FIG. 5 according to atleast one example embodiment.

FIG. 8 is a perspective view illustrating a target debris collectiondevice in accordance with at least one example embodiment.

FIG. 9 is a perspective view illustrating a first heating member of thetarget debris collection device in FIG. 8 according to at least oneexample embodiment.

FIG. 10 is a perspective view illustrating target material debrisdischarged along the first heating member of the target debriscollection device in FIG. 8 according to at least one exampleembodiment.

FIG. 11 is a perspective view illustrating a target debris collectiondevice in accordance with at least one example embodiment.

DETAILED DESCRIPTION

Hereinafter, various example embodiments will be explained in detailwith reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating an exposure apparatus inaccordance with at least one example embodiment.

Referring to FIG. 1, an exposure apparatus 10 may include an extremeultraviolet (EUV) light source apparatus 20, a mirror system 30, a maskstage 40 and/or a wafer stage 50, but is not limited thereto. The mirrorsystem 30 may include an illumination mirror system 32 and/or aprojection mirror system 34, etc.

In at least one example embodiment, the exposure apparatus 10 mayperform a reflective photolithography process using a photomask M. Forexample, the exposure apparatus 10 may perform an extreme ultraviolet(EUV) exposure process, but is not limited thereto.

In particular, the extreme ultraviolet light source apparatus 20 maygenerate extreme ultraviolet (EUV) light, etc. For example, the extremeultraviolet light source apparatus 20 may generate light having awavelength of around 13.5 nm, for example, the wavelength of EUV light,using plasma, etc. A laser generator 120 may direct a laser light L to atarget droplet to create a highly ionized plasma P, and the EUVradiation emitted from the plasma may be irradiated to the illuminationmirror system of the mirror system 30 through a light collector 210.

The illumination mirror system 32 may include a plurality ofillumination mirrors, but is not limited thereto. The illuminationmirrors may condense the EUV light in order to decrease and/or reducethe loss of the EUV light which propagates out of the mirroredirradiating paths.

The mask stage 40 may mount the photomask M on a lower surface thereofand may move in a horizontal direction, but the example embodiments arenot limited thereto. For example, the mask stage 40 may move in otherdirections and/or may mount the photomask M on other surfaces, etc. Thephotomask M may be mounted on a surface of the mask stage 40 such that asurface (of a front side) in which optical patterns of the photomask Mare formed, may face in the direction of a projection mirror system 34,a semiconductor substrate, such as wafer W, etc.

The EUV light transferred from the illumination mirror system 32 may beirradiated to the photomask M mounted on the mask stage 40. The EUVlight reflected from the photomask M mounted on the mask stage 40 may betransferred to the projection mirror system 34.

The projection mirror system 34 may receive the EUV light reflected fromthe photomask M and transfer the received EUV light to a wafer W (e.g.,semiconductor wafer, semiconductor substrate, silicon substrate, etc.).The projection mirror system 34 may include a plurality of projectionmirrors.

The wafer stage 50 may receive the wafer W and move in a horizontaldirection, but is not limited thereto, and the wafer stage 50 may movein additional directions. For example, a photoresist layer having adesired and/or predetermined thickness may be formed on the wafer W, andthe EUV light may be focused on the photoresist layer, etc. Accordingly,the exposure apparatus 10 may generate and emit the light onto thephotoresist layer on the wafer W, thereby irradiating the photoresistlayer. Thus, the photoresist layer may be partially and/or fully exposedbased on the optical pattern information of the photomask M to form aphotoresist pattern, and then a layer underlying the photoresist patternmay be partially and/or fully etched to form a pattern on the wafer W,doped in accordance with the photoresist pattern, and/or metallized inaccordance with the photoresist pattern, etc.

Hereinafter, the extreme ultraviolet light source apparatus of theexposure apparatus in FIG. 1 will be explained.

FIG. 2 is a block diagram illustrating the extreme ultraviolet lightsource apparatus in accordance with at least one example embodiment.

Referring to FIG. 2, the extreme ultraviolet light source apparatus 20may include a collector 210 included in an EUV vessel 200 configured tocollect and reflect extreme ultraviolet light, a target dropletgenerator 100 configured to generate and deliver target droplets intothe collector 210, and/or a target debris collection device configuredto collect target material debris within the EUV vessel 200, but theexample embodiments are not limited thereto and may include a greater orlesser number of constituent elements. For example, the extremeultraviolet light source apparatus 20 may further include a lasergenerator 120 configured to direct a laser light L to the target dropletinjected into the collector 210, etc. Further, the extreme ultravioletlight source apparatus 20 may further include a purge gas supply portionconfigured to supply a purge gas into the collector 210 as well.

In at least one example embodiment, the target droplet generator 100 maygenerate source droplets 110A, 110B as a target source for generatingextreme ultraviolet light. The target droplet generator 100 may injectthe source droplets at a desired and/or predetermined period into thecollector 210 through a nozzle 102. The target droplet generator 110 maydeliver the droplets 110A, 110B of a target material into the interiorof the EUV vessel 200 to an irradiation site, that is, a primary focusPF (e.g., a target, etc.) of the collector 210.

For example, the target droplet may include at least one element, e.g.,xenon, lithium tin, etc., with one or more emission rays in the EUVwavelength range. The EUV emitting element may be in the form of liquiddroplets and/or solid particles contained within the liquid droplets,etc. For example, the element tin may be used as pure tin, as a tincompound, e.g., SnBr₄, SnBr₂, SnH₄, as a tin alloy, e.g., tin-galliumalloys, tin-indium alloys, tin-indium-gallium alloys, or combinationsthereof.

The laser generator 120 may irradiate the target droplet with the laserlight L at the irradiation site in the EUV vessel 200. The lasergenerator 120 may direct the laser light L to the target dropletinjected into the collector 210 to generate EUV light. The lasergenerator 120 may generate a CO₂ laser light and then the generatedlaser light may be focused to the irradiation site through a steeringsystem. The laser light may react with, and vaporize, the target dropletto produce plasma P. The resulting plasma P may emit output radiation,e.g., EUV radiation and/or EUV light.

A target material catcher 104 may be installed to be opposite to thenozzle 102 of the target droplet generator 100, but is not limitedthereto. The unused or un-irradiated droplets 110C may be collected inthe target material catcher 104.

The collector 210 may include a reflection surface having the primaryfocus within or near the irradiation site to which the laser light isfocused. According to some example embodiments the reflection surfacemay be an elliptical reflection surface, but is not limited thereto. Thecollector 210 may include an aperture 212. The aperture 212 may allowthe laser light L to pass through to the irradiation site. The collector210 may collect, reflect, and/or focus the EUV light (EL) to anintermediate focus IF, and then, the EUV light may be delivered to themirror system 30 of the exposure apparatus.

The purge gas supply portion 130 may supply the purge gas, such ashydrogen gas, etc., into the EUV vessel 200 to transform the targetmaterial debris, such as tin, etc., deposited on the inner surfaces ofthe EUV vessel 200 and/or the collector 210 into volatile targetmaterial compounds, such as tin compound SnH₄, etc., to thereby purgethe volatile target debris compounds (e.g., volatile tin compounds,etc.) from the EUV vessel 200.

The target debris collection device may include a baffle assembly 300 inthe EUV vessel 200, and the target debris collection device may collectand/or exhaust the target material debris from the EUV vessel 200, e.g.,microdroplets formed on the baffle assembly 300, etc. The baffleassembly 300 may include a series of passages and structures thatreceive, slow, and/or capture a portion of microparticles created whenthe target droplet is irradiated in the irradiation site. The baffleassembly may extend within the EUV vessel 200 from the collector 210 toan outlet port 202 of the EUV vessel 200, but is not limited thereto.The baffle assembly 300 may not impede, prevent, and/or otherwiseocclude the EUV light (EL) from passing from the collector 210 through athree dimensional, cone-shaped transmissive region 302 to theintermediate focus IF.

Hereinafter, the target debris collection device will be explained.

FIG. 3 is a cross-sectional view illustrating a target debris collectiondevice in accordance with at least one example embodiment. FIG. 4 is ablock diagram illustrating a heating device of the target debriscollection device in FIG. 3 according to at least one exampleembodiment. FIG. 5 is a perspective view illustrating a portion of abaffle assembly of the target debris collection device in FIG. 3according to at least one example embodiment. FIG. 6 is a perspectiveview illustrating a portion of a discharge plate of the baffle assemblyin FIG. 5 according to at least one example embodiment. FIG. 7 is abottom view of the baffle assembly in FIG. 5 according to at least oneexample embodiment. FIG. 8 is a perspective view illustrating a targetdebris collection device in accordance with at least one exampleembodiment. FIG. 9 is a perspective view illustrating a first heatingmember of the target debris collection device in FIG. 8 according to atleast one example embodiment. FIG. 10 is a perspective view illustratingtarget material debris discharged along the first heating member of thetarget debris collection device in FIG. 8 according to at least oneexample embodiment.

Referring to FIGS. 3 to 10, a target debris collection device mayinclude a baffle assembly 300 arranged within and/or included in a EUVvessel 200, and/or a guide unit configured to guide target materialdebris 112 collected in the baffle assembly 300 to a collection tank500, but is not limited thereto. The baffle assembly 300 may include abaffle body 310, and/or a discharge plate 320, etc. The guide unit mayinclude at least one heating member configured to impede and/or preventthe liquid target material debris 112 from becoming solidified, or inother words the at least one heating member heats the liquid targetmaterial debris 112 in order to decrease the occurrence of the liquidtarget material debris 112 from becoming solidified, etc.

In at least one example embodiment, the baffle body 310 may include acone-shaped tube extending within the EUV vessel 200 from the collector210 to the outlet port 202 of the EUV vessel 200, but is not limitedthereto. The baffle body 310 may include a first end portion 311 aadjacent to the collector 210 and a second end portion 311 b opposite tothe first end portion 311 a and adjacent to the outlet portion 202, butthe example embodiments are not limited thereto and may include a singleend portion or three or more end portions, etc. The first end portion311 a may have a diameter greater than a diameter of the second endportion 311 b, but is not limited thereto, and the first end portion 311a may have the same diameter as the second end portion 311 b, etc. Theextreme ultraviolet layer EL reflected from the collector 210 may bedirected to the intermediate focus IF through the cone-shapedtransmissive region 302 of the baffle body 310.

A plurality of vanes 312 may extend in an extending direction of thebaffle body 310 on an inner wall of the baffle body 310. The vane 312may protrude in a radial direction inwardly from the inner wall of thecone-shaped baffle body 310. The vanes 312 may surround the transmissiveregion 302, and may not protrude into the transmissive region 152, butis not limited thereto.

The baffle body 310 may be configured in a near vertical orientation,but is not limited thereto. A central line CL of the baffle body 310 maybe oriented to be inclined at a desired and/or predetermined angle θwith respect to a gravity direction G. For example, the angle θ may bein a range of from 1 degree to 30 degrees, but is not limited thereto.

Additionally, as described later, the baffle body 310 may be heated byat least one other heating member, such as a fourth heating member 360.For example, the vanes 312 of the baffle body 310 may be heated to atemperature of about 100° C. to about 400° C., but the exampleembodiments are not limited thereto, and for example, the vanes 312 maybe heated to a temperature appropriate to maintain the target materialdebris in liquid or semi-liquid form.

The discharge plate 320 may be provided in the first end portion 311 aof the baffle body 310, but is not limited thereto. The discharge plate320 may include a plate having an annular shape, but is not limitedthereto. The vanes 312 may extend from an upper surface of the dischargeplate 320 along the extending direction of the baffle body 310, but isnot limited thereto.

The target material debris may be collected by the discharge plate 320which is positioned at a relatively low level, e.g., the discharge plate320 towards a location away from the outlet port 202 of the EUV vessel200, etc., and the target material debris collected on the dischargeplate 320 may be exhausted from the baffle assembly through a singlepassage or a series of passages.

For example, first and second discharge passages 322, 324 and aconnection passage 326 connecting the first and second dischargepassages may be formed in the upper surface of the discharge plate 320,and a discharge hole 340 connected thereto may be formed in thedischarge plate 320, but the example embodiments are not limitedthereto. The first and second discharge passages 322, 324 may be formedconcentrically around the center of the discharge plate 320, but are notlimited thereto. At least two discharge holes 340 may be formed in thedischarge plate 320, but the example embodiments are not limitedthereto, and for example, a single discharge hole may be present, etc. Adischarge nozzle 350 may be installed in a lower surface of thedischarge plate 320 to be connected to the discharge hole 340. Thedischarge nozzle 350 may protrude from the lower surface of thedischarge plate 320. For example, the discharge nozzle 350 may have adiameter (D) between approximately 4 mm to 16 mm, but is not limitedthereto.

In at least one example embodiment, a guide structure may be connectedto the discharge nozzle 350 such that the target material debris 112collected on the discharge plate 320 is guided to be discharged to thecollection tank 500. Additionally, at least one first heating member maybe provided in the guide structure to heat the liquid target materialdebris 112, and therefore impede, decrease the possibility of, and/orprevent the liquid target material debris 112 from becoming solidified.

As illustrated in FIGS. 6 to 10, the guide structure 400 may extend fromthe discharge plate 320 toward the collection tank 500. The guidestructure 400 may include a plurality of heating lines 410 as the firstheating member. The heating line 410 may extend in a direction parallelwith the gravity direction from the discharge nozzle 350 toward thecollection tank 500, but is not limited thereto. The heating line 410may be the first heating member connected to a first power supply 450.Additionally, the heating line 410 may serve as at least a portion ofthe guide structure 400. In this case, an outer covering material (e.g.,insulating or conductive material) of the heat line may serve as theguide structure 400.

For example, three heating lines 410 may be provided. The three heatinglines 410 may be spaced apart from one another. In this case, the liquidtarget material debris 112 may run down between the three heating lines410 to be collected in the collection tank 500.

The guide structure may have a length of approximately 100 mm toapproximately 300 mm, but the example embodiments are not limitedthereto. For example, the length of the guide structure may bedetermined in consideration of a distance between the discharge nozzle350 and the collection tank 500, etc.

The first heating member 410 may be electrically connected to the firstpower supply 450. The liquid target material debris 112 may be heated bythe first heating member 410 such that the liquid target material debrisis collected in the collection tank 500 without becoming solidified.

As illustrated in FIG. 4, a second heating member 420 may be provided inthe discharge nozzle 350 to heat the target material debris 112 tomaintain the target material debris in a liquid or semi-liquid state,and therefore impede, decrease the occurrence of, and/or prevent thetarget material debris from becoming solidified. The second heatingmember 420 may include a heating line which surrounds the dischargenozzle 350. The second heating member 420 may be electrically connectedto a second power supply 452.

A third heating member 430 may be provided in the passage of thedischarge plate 320 to heat the target material debris 112 to maintainthe target material debris in a liquid or semi-liquid state, andtherefore impede, decrease the occurrence of, and/or prevent the targetmaterial debris from becoming solidified. The third heating member 430may include a heating line which extends along the first and seconddischarge passages 322, 324 and the connection passage 326. The heatingline may extend from the passage to the discharge hole 340. The thirdheating member 430 may be electrically connected to a third power supply454.

The fourth heating member 360 may be provided in the baffle body 310 toheat the target material debris 112 to maintain the target materialdebris in a liquid or semi-liquid state, and therefore impede, decreasethe occurrence of, and/or prevent the target material debris from beingsolidified. The fourth heating member 360 may include a heating linewhich surrounds the baffle body 310. The fourth heating member 360 maybe electrically connected to a fourth power supply 352.

The first to fourth power supplies 450, 452, 454, 362 may be connectedto a controller. The controller may control temperatures of the first tofourth heating members 410, 420, 430, 360 to heat the target materialdebris 112 to maintain the target material debris in a liquid orsemi-liquid state, and therefore impede, decrease the occurrence of,and/or prevent the target material debris from becoming solidified.

As mentioned above, the target debris collection device may include theguide unit to guide target material debris 112 collected in the baffleassembly 300 to the collection tank 500. The guide unit may include theat least one heating member configured to heat the target materialdebris 112 to maintain the target material debris in a liquid orsemi-liquid state, and therefore impede, decrease the occurrence of,and/or prevent the liquid target material debris 112 from beingsolidified.

Accordingly, the target material debris deposited on the EUV vessel 200may be maintained in a liquid or semi-liquid state (e.g., not becomesolidified), and may be exhausted smoothly to the collection tank 500.Thus, maintenance time for removing the target debris material (e.g.,tin material, etc.) deposited in the EUV vessel may be greatly reduced.

FIG. 11 is a perspective view illustrating a target debris collectiondevice in accordance with at least one example embodiment. The targetdebris collection device may be substantially the same as or similar tothe target debris collection device described with reference to FIGS. 3to 10 except for a configuration of a guide unit. Thus, same referencenumerals will be used to refer to the same or like elements and anyfurther repetitive explanation concerning the above elements will beomitted.

Referring to FIG. 11, a target debris collection device may include abaffle assembly 300 arranged within a EUV vessel 200, a guide structure400 configured to guide target material debris 112 collected in thebaffle assembly 300 to a collection tank 500, and/or a first heatingmember 410 provided in the guide structure 400 to heat the targetmaterial debris 112 to maintain the target material debris in a liquidor semi-liquid state, and therefore impede, decrease the occurrence of,and/or prevent the liquid target material debris 112 from becomingsolidified, etc.

In at least one example embodiment, the guide structure 400 may includea guide plate which extends from a discharge plate 320 toward thecollection tank 500. For example, the guide plate may have across-section of circle or semi-circle, but is not limited thereto. Theguide structure 400 may extend in a direction parallel with a gravitydirection from a discharge nozzle 350 toward the collection tank 500.

The first heating member 410 may include a heating line which extendsalong the guide plate. The first heating member 410 may be electricallyconnected to a first power supply 450.

The guide plate may protect liquid target material debris 112 fromdeviating by a gas flowing within the EUV vessel 200 and may guide theliquid target material debris 112 to the collection tank 500.Accordingly, the guide plate may protect the liquid target materialdebris from being affected by the hydrogen gas current such that theliquid target material debris may be collected precisely into thecollection tank 500.

The above extreme ultraviolet light source apparatus may be applied inapplications such as a lithography apparatus for manufacturingsemiconductor devices, however, the example embodiments are not limitedthereto. The extreme ultraviolet light source apparatus according to atleast one example embodiment may be applied to other photolithographyprocesses, such as processes for manufacturing display devices such flatdisplay, organic light emitting display, etc.

The foregoing is illustrative of various example embodiments and is notto be construed as limiting thereof. Although a few example embodimentshave been described, those skilled in the art will readily appreciatethat many modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of theinventive concepts. Accordingly, all such modifications are intended tobe included within the scope of the example embodiments as defined inthe claims.

What is claimed is:
 1. An extreme ultraviolet light source apparatus, comprising: a collector included in a vessel, the collector configured to reflect extreme ultraviolet light; a baffle assembly included in the vessel, the baffle assembly configured to allow the extreme ultraviolet light reflected from the collector to pass through an internal transmissive region of the baffle assembly, the baffle assembly including a baffle body and a discharge plate, the discharge plate provided in a first end portion of the baffle body adjacent to the collector, the discharge plate configured to collect the target material debris within the baffle body; a guide structure configured to guide target material debris collected in the baffle assembly to a collection tank; and a first heating member and a second heating member, the first heating member provided in the guide structure, the second heating member provided in the discharge plate, the first and second heating members configured to heat the target material debris.
 2. The extreme ultraviolet light source apparatus of claim 1, wherein the first heating member comprises at least one heating line which extends from the baffle assembly to the collection tank, and the at least one heating line is included in the guide structure.
 3. The extreme ultraviolet light source apparatus of claim 1, wherein the guide structure has a length between 100 mm to 300 mm.
 4. The extreme ultraviolet light source apparatus of claim 1, wherein the guide structure extends along a direction of gravity.
 5. The extreme ultraviolet light source apparatus of claim 1, wherein the guide structure comprises a guide plate which extends from the baffle assembly to the collection tank.
 6. The extreme ultraviolet light source apparatus of claim 1, wherein the baffle body is between the collector and an outlet port of the vessel.
 7. The extreme ultraviolet light source apparatus of claim 1, further comprising: a discharge nozzle installed in a discharge hole formed in the discharge plate, the discharge nozzle configured to be connected to the guide structure.
 8. The extreme ultraviolet light source apparatus of claim 7, further comprising: a third heating member included in the discharge nozzle, the third heating member configured to heat the target material debris.
 9. An extreme ultraviolet light source apparatus, comprising: a collector included in a vessel, the collector configured to reflect extreme ultraviolet light; and a target debris collection device configured to collect target material debris within the vessel, the target debris collection device comprises, a baffle body between the collector and an outlet port of the vessel, the baffle body configured to allow the extreme ultraviolet light reflected from the collector to pass through an internal transmissive region of the baffle body, a discharge plate provided in a first end portion of the baffle body adjacent to the collector, the discharge plate configured to collect the target material debris within the baffle body, a guide structure configured to guide the target material debris collected in the discharge plate to a collection tank, the guide structure having a length between 100 mm and 300 mm, a first heating member provided in the guide structure, the first heating member configured to heat the target material debris, and a second heating member provided in the discharge plate, the second heating member configured to heat the target material debris.
 10. The extreme ultraviolet light source apparatus of claim 9, wherein the first heating member comprises at least one heating line which extends from the discharge plate to the collection tank.
 11. The extreme ultraviolet light source apparatus of claim 9, wherein the guide structure extends along a direction of gravity.
 12. The extreme ultraviolet light source apparatus of claim 9, wherein the guide structure comprises a guide plate which extends from the discharge plate to the collection tank.
 13. The extreme ultraviolet light source apparatus of claim 9, wherein the target debris collection device further comprises a discharge nozzle installed in a discharge hole formed in the discharge plate, the discharge nozzle configured to be connected to the guide structure.
 14. The extreme ultraviolet light source apparatus of claim 9, wherein the discharge plate has an annular shape extending along the first end portion of the baffle body.
 15. The extreme ultraviolet light source apparatus of claim 9, further comprising: a purge gas supply portion configured to supply a purge gas into the collector.
 16. A target debris collection device for extreme ultraviolet light source apparatus, comprising: a baffle body extending within an extreme ultraviolet (EUV) vessel between a collector and an outlet port of the EUV vessel, the baffle body configured to allow extreme ultraviolet light reflected from the collector to pass through an internal transmissive region of the baffle body; a discharge plate provided in a first end portion of the baffle body adjacent to the collector, the discharge plate configured to collect target material debris on an inner surface of the baffle body; a guide structure configured to guide the target material debris collected in the discharge plate to a collection tank; a first heating member provided in the guide structure, the first heating member configured to heat the target material debris; and a second heating member provided in the discharge plate, the second heating member configured to heat the target material debris.
 17. The target debris collection device for extreme ultraviolet light source apparatus of claim 16, further comprising: a plurality of vanes extending from the baffle body on an inner wall of the baffle body.
 18. The target debris collection device for extreme ultraviolet light source apparatus of claim 16, wherein the first heating member comprises at least one heating line which extends from the discharge plate to the collection tank.
 19. The target debris collection device for extreme ultraviolet light source apparatus of claim 16, wherein the guide structure comprises a guide plate which extends from the discharge plate to the collection tank.
 20. The target debris collection device for extreme ultraviolet light source apparatus of claim 16, further comprising: a discharge nozzle installed in a discharge hole formed in the discharge plate, the discharge nozzle configured to be connected to the guide structure. 